| PART |
Description |
Maker |
| DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直| 5A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 35A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd.
Glenair, Inc.
|
| PF0140 |
MOSFET POWER AMPLIFIER MODULE FOR GSM HANDY PHONE
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| S-AU83AH |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 32-W COMMERCIAL UHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| S-AU83AL |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 32-W COMMERCIAL UHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| PF01412A PF01412 |
IC,RF AMPLIFIER,HYBRID,MODULE,8PIN,PLASTIC
From old datasheet system
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
Hitachi America
HITACHI[Hitachi Semiconductor]
|
| S-AU84 |
RF Power Amplifier Module Power Amplifier Module for Japan cdmaOne
|
TOSHIBA
|
| STM915-16 |
890 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
RF POWER MODULE GSM MOBILE APPLICATIONS . LINEAR POWER AMPLIFIER
|
STMICROELECTRONICS
ST Microelectronics
|
| S-AV38 |
RF POWER AMPLIFIER MODULE ○RF POWER AMPLIFIER MODULE for VHF BAND
RF POWER AMPLIFIER MODULE ≯RF POWER AMPLIFIER MODULE for VHF BAND
|
Toshiba Semiconductor
|
| APTM20SKM08T APTM20SKM08TG |
208 A, 200 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
Buck chopper MOSFET IGBT Power Module
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| APT20M22JVRU3 |
97 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
ISOTOP Buck chopper MOSFET Power Module
|
Microsemi Corporation
|
