| PART |
Description |
Maker |
| K9F4G08U0M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512M x 8 1克8位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| K9F4G08U1M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
|
Samsung semiconductor
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| IDT72T51333L5BB IDT72T51353L6BBI IDT72T51333 IDT72 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
IDT[Integrated Device Technology]
|
| EDE5108AJBG-8E-E EDE5116AJBG-8E-E EDE5116AJBG-6E-E |
512M bits DDR2 SDRAM
|
Elpida Memory, Inc.
|
| EDX5116ADSE-3A-E EDX5116ADSE-3B-E EDX5116ADSE-3C-E |
512M bits XDR DRAM
512M bits XDR?/a> DRAM
|
Elpida Memory
|
| EDD5108ADTA-5C |
512M bits DDR SDRAM
|
Elpida Memory, Inc.
|
| EDE5116AJBG-1J EDE5116AJBG-1J-E EDE5108AJBG-1J EDE |
512M bits DDR2 SDRAM
|
Elpida Memory
|
| EDE5104GASA EDE5104GASA-4A-E EDE5104GASA-5A-E EDE5 |
512M bits DDR-II SDRAM
|
Elpida Memory
|
