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K9F4G08U0M - 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

K9F4G08U0M_394403.PDF Datasheet


Part No.	K9F4G08U0M K9K8G08U1M
Description	512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
File Size	944.83K / 41 Page
Maker	Samsung Electronic Samsung semiconductor
Homepage	http://www.samsung.com/Products/Semiconductor/
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Related Part Number

PART	Description	Maker
K9F4G08U1M	512M x 8 Bits / 1G x 8 Bits NAND Flash Memory	Samsung semiconductor
TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存 32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY 32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY	Toshiba, Corp. Toshiba Corporation
IDT72T51236L5BB IDT72T51236L5BBI IDT72T51256L6BBI	2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits	IDT[Integrated Device Technology]
EDD5116ADTA-7BL EDD5104ADTA EDD5104ADTA-6B EDD5104	512M bits DDR SDRAM	ELPIDA[Elpida Memory]
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EDE5116AJBG EDE5116AJBG-6E-E EDE5116AJBG-8E-E EDE5	512M bits DDR2 SDRAM	Elpida Memory
EDD5108AGTA-5B-E EDD5108AGTA-5C-E EDD5108AGTA-6B-E	512M bits DDR SDRAM	Elpida Memory
EDD5108AFTA-6B-E EDD5116AFTA-6B-E EDD5108AFTA-7B-E	512M bits DDR SDRAM	Elpida Memory, Inc.

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