| PART |
Description |
Maker |
| CXK5T8512TM/TN-10LLX CXK5T8512TM/TN-12LLX CXK5T851 |
64K X 8 STANDARD SRAM, 120 ns, PDSO32
65536-word x 8-bit High Speed CMOS Static RAM
65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| CXK5B18120TM- CXK5B18120TM-12 CXK5B18120TM |
128 x 64 pixel format, LED Backlight available
-65536-word x 18-bit High Speed Bi-CMOS Static RAM
|
SONY[Sony Corporation]
|
| M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP |
From old datasheet system
1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-bit (65536-word by 16-bit) CMOS static RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5L2764K M5L2764K-2 |
65536 Bit Erasable and Electrically Reprogrammable ROM
65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLT REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
|
| CXK5864BM-10L CXK5864B CXK5864BP-10L CXK5864BP-12L |
Series 400B sealed SMT sub-miniature rocker switch with variety of switching functions
8,192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM
8192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM
8,192字8位高速CMOS静态RAM
|
http://
SONY[Sony Corporation]
|
| MSM3764A |
65536-WORD X 1-BIT DYNAMIC RAM
|
OKI SEMICONDUCTOR CO., LTD.
OKI electronic componets
|
| TC551664AJ |
65536 Word x 16-Bit CMOS Static RAM
|
Toshiba Semiconductor
|
| CXK58512M CXK58512M-10LL CXK58512M-55LL CXK58512M- |
65536-word X 8-bit High Speed CMOS Static RAM 65536字8位高速CMOS静态RAM
RG-62A/U TYPE COAX RoHS Compliant: Yes 65536字8位高速CMOS静态RAM
Twinaxial Cable; Impedance:78ohm; Conductor Size AWG:20; No. Strands x Strand Size:7 x 28; Jacket Material:Polyvinylchloride (PVC); Approval Categories:UL AWM Style 2092; Conductor Material:Copper; Conductor Plating:Tin RoHS Compliant: Yes
|
Sony, Corp.
Sony Corporation
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| HI586008 HI5860IA HI5860SOICEVAL1 HI5860IA-T |
12-Bit, 130 MSPS, High Speed D/A Converter; Temperature Range: -40°C to 85°C; Package: 28-TSSOP T&R PARALLEL, WORD INPUT LOADING, 0.035 us SETTLING TIME, 12-BIT DAC, PDSO28
12-Bit, 130MSPS, High Speed D/A Converter
|
Intersil, Corp.
Intersil Corporation
|
