| PART |
Description |
Maker |
| 2N6666 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS
|
Boca Semiconductor Corporation
|
| BD190 BD186 BD188 |
PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| TIP122 |
PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conduct...
|
| BD436T BD436G BD438G BD442 |
Plastic Medium Power Silicon PNP Transistor
|
Rectron Semiconductor
|
| MJE10B1 MJE1093 MJE2003 MJE1103 MJE1102 MJE2092 MJ |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| BD237-D |
Plastic Medium Power Silicon NPN Transistor
|
ON Semiconductor
|
| MJE344G MJE34406 |
Plastic NPN Silicon Medium?Power Transistor
|
ON Semiconductor
|
| BDX53BG BDX53B06 BDX54BG BDX53CG BDX53B BDX54B BDX |
Plastic Medium-Power Complementary Silicon Transistors
|
ON Semiconductor
|
| BDX53B-D |
Plastic Medium-Power Complementary Silicon Transistors
|
ON Semiconductor
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
