PART |
Description |
Maker |
APT2X101D100J APT2X100D100J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1000V 100A
|
ADPOW[Advanced Power Technology]
|
APT2X101D120J APT2X100D120J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1200V 100A
|
ADPOW[Advanced Power Technology]
|
APT2X31D20J APT2X30D20J |
CONNECTOR ACCESSORY 双超快软恢复整流二极 DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 200V 30A
|
Advanced Power Technology, Ltd.
|
STE180N05 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
|
STMicroelectronics
|
STE36N50 36N50DA |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE N沟道增强型功率MOS器件中的ISOTOP封装 IC SHUNT REG ADJ 1.0% SOT-25
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics]
|
STE38NB50 5564 |
N-Channel 500V-0.11Ω-38A- ISOTOP PowerMESHTM MOSFET(N沟道MOSFET) N沟道500V -0.11Ω- 38A条,1000V的集电极PowerMESHTM MOSFET的(不适用沟道MOSFET的) N - CHANNEL PowerMESH MOSFET N - CHANNEL 500V - 0.11 - 38A - ISOTOP PowerMESH TM MOSFET From old datasheet system N - CHANNEL 500V - 0.11 ohm - 38A - ISOTOP PowerMESH MOSFET
|
STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
PLED512 |
DUAL LINE 5 VOLT DIE
|
PROTEC[Protek Devices]
|
STE26NA90 6245 -STE26NA90 |
N-Channel 900V-0.25惟-26A-ISOTOP Fast Power MOSFET(N娌??蹇?????MOSFET) From old datasheet system N - CHANNEL 900V - 0.25ohm- 26A - ISOTOP FAST POWER MOSFET N - CHANNEL 900V - 0.25 Ohm - 26A - ISOTOP FAST POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
SOT545-3 |
plastic thermal enganced thin quad flat package; 48 leads; body 7 x 7 x 1 mm; exposed die pad
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|