| PART |
Description |
Maker |
| APT2X60D120J APT2X61D120J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1200V 60A
|
ADPOW[Advanced Power Technology]
|
| APT2X61D100J APT2X60D100J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1000V 60A
|
ADPOW[Advanced Power Technology]
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| HS9-302RH-8 HS0-302RH-Q HS9-302RH-Q |
CMOS Dual DPST Analog Switch; Temperature Range: -; Package: 14-FlatPack DUAL 2-CHANNEL, DBL POLE SGL THROW SWITCH, CDFP14
CMOS Dual DPST Analog Switch; Temperature Range: -55°C to 125°C; Package: Die (Military Visual) DUAL 2-CHANNEL, DBL POLE SGL THROW SWITCH, UUC
|
Intersil, Corp.
|
| STE36N50 36N50DA |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE N沟道增强型功率MOS器件中的ISOTOP封装
IC SHUNT REG ADJ 1.0% SOT-25
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| APT100GT120JRDQ4 |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60;
|
MICROSEMI POWER PRODUCTS GROUP
|
| APT77N60JC3 |
Power MOSFET; Package: ISOTOP®; ID (A): 77; RDS(on) (Ohms): 0.035; BVDSS (V): 600;
Super Junction MOSFET
|
MICROSEMI[Microsemi Corporation]
|
| 28333-PCN-001-A |
Mold Compound and Die Attach Change for ETQFP Package
|
M/A-COM Technology Solutions, Inc.
|
| STE40NC60 |
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II POWER MOSFET
N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh⑩II MOSFET
N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh?II MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
