| PART |
Description |
Maker |
| GLT6200L16LI-70FG GLT6200L16LI-85TC GLT6200L16LI-5 |
70ns; Ultra low power 128K x 16 CMOS SRAM
85ns; Ultra low power 128K x 16 CMOS SRAM
55ns; Ultra low power 128K x 16 CMOS SRAM
|
G-LINK Technology
|
| IS62WV1288DALL/DBLL IS65WV1288DALL/DBLL |
128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS62U6416LL-20B IS62U6416LL-20K IS62U6416LL-20BI I |
64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM 128K X 8 STANDARD SRAM, 200 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| N02L163WC2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
|
NanoAmp Solutions
|
| N02L163WN1A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
|
NanoAmp Solutions
|
| V62C3801024L-100T V62C3801024LL-85V V62C3801024L V |
High Temp Tested PC357N5TJ00F
Ultra Low Power 128K x 8 CMOS SRAM 128K的超低功耗8 CMOS SRAM
|
MOSEL[Mosel Vitelic Corp]
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
|
| V62C2162048L V62C2162048L-100B V62C2162048L-100T V |
PC123X5YUP0F 128K的超低功耗16 CMOS SRAM
Ultra Low Power 128K x 16 CMOS SRAM
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic Corp]
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| IS62WV12816BLL-55TI IS62WV12816BLL-55T IS62WV12816 |
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM 128K X 16 STANDARD SRAM, 70 ns, PDSO44
Circular Connector; No. of Contacts:6; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| BS616UV2019AI85 BS616UV2019TI85 |
Ultra Low Power CMOS SRAM 128K X 16 bit 超低功耗CMOS SRAM 128K的16
|
BRILLIANCE SEMICONDUCTOR, Inc.
|
| IDT71L024L70PZI IDT71L024 IDT71L024L100PZ IDT71L02 |
low power 3v cmos sram 1 meg (128k X 8-bit) 128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
