| PART |
Description |
Maker |
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
| GLT6200L16LI-70FG GLT6200L16LI-85TC GLT6200L16LI-5 |
70ns; Ultra low power 128K x 16 CMOS SRAM
85ns; Ultra low power 128K x 16 CMOS SRAM
55ns; Ultra low power 128K x 16 CMOS SRAM
|
G-LINK Technology
|
| SD18U128 |
Ultra Low Power 128K x 8 CMOS SRAM
|
Soft Device
|
| P3C1024L70SC P3C1024L70SI P3C1024L70TC P3C1024L70T |
ULTRA LOW POWER 128K x 8 CMOS STATIC RAM
|
Pyramid Semiconductor Corporation
|
| N02L1618C1A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
|
NanoAmp Solutions
|
| BS616LV2017 BS616LV2017EIP70 BS616LV2017AC BS616LV |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Very Low Power/Voltage CMOS SRAM 128K X 16 bit 非常低功电压CMOS SRAM28K的16
FF-SR2 Series, Two-hand Control, 24 Vdc 非常低功电压CMOS SRAM28K的16
LM49370 Audio Sub-System with an Ultra Low EMI, Spread Spectrum, Class D Loudspeaker Amplifier, a Dual-Mode Stereo Headphone Amplifier, and a Dedicated PCM Interface for Bluetooth Transceivers
Marine Lamp, 4 in x 6 in [101,6 mm x 152,4 mm], Wide Flood Beam Pattern, 12 Vdc/50 W/4 A, Flush mounting
Asynchronous 2M(128Kx16) bits Static RAM
|
Brilliance Semiconducto...
Honeywell International, Inc.
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| KM68V1000BLE_LE-L KM68U1000BLE_LE-L KM68U1000BLG-1 |
CONNECTOR ACCESSORY 连接器附
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM 128K的8位低功耗和低电压的CMOS Statinc内存
(KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| BS616UV2019AI85 BS616UV2019TI85 |
Ultra Low Power CMOS SRAM 128K X 16 bit 超低功耗CMOS SRAM 128K的16
|
BRILLIANCE SEMICONDUCTOR, Inc.
|
| IC62C1024L IC62C1024L-35Q IC62C1024L-35QI IC62C102 |
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
From old datasheet system
55ns; 5V; 128K x 8 low power CMOS static RAM
35ns; 5V; 128K x 8 low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IDT71L024L70PZI IDT71L024 IDT71L024L100PZ IDT71L02 |
low power 3v cmos sram 1 meg (128k X 8-bit) 128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| V62C5181024L-45WI V62C5181024L-55WI V62C5181024LL- |
128K x 8 CMOS static RAM, 45ns, low power
128K x 8 CMOS static RAM, 55ns, low power
128K x 8 CMOS static RAM, 45ns, low low power
|
Mosel Vitelic Corp
|
