| PART |
Description |
Maker |
| PHN708 |
7 N-channel 80 mohm FET array enhancement mode MOS transistors
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 4AM15 |
Silicon N Channel/P Channel Power MOS FET Array
From old datasheet system
|
hitachi
|
| 4AM15 |
Silicon N-Channel/P-Channel Power MOS FET Array
|
HITACHI[Hitachi Semiconductor]
|
| SSD5501 XSD5501 |
N-Channel Depletion-Mode 4-Channel DMOS FET Array
|
CALOGIC[Calogic, LLC]
|
| SG200 MC07XSF517 |
Triple 7.0 mOhm and Dual 17 mOhm High-Side Switch
|
Freescale Semiconductor, Inc
|
| MTP55N06 MTP55N06Z MTP55N06Z_D ON2627 ON2626 |
From old datasheet system
TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
|
| MTP1302 MTP1302_D ON2549 ON2548 |
TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm
From old datasheet system
|
ON Semi
MOTOROLA[Motorola, Inc]
|
| 2SK3467 2SK3467-ZK 2SK3467-ZK-AZ |
80 A, 20 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB MP-25ZK, 3 PIN
PROFET™: Smart High Side Switches; Package: PG-DSO-36; Channels: 8.0; RON @ Tj = 25°C : 200.0 mOhm; Recommended Operating Voltage Range: 11.0 - 45.0 V; IL(SC): 3.0 A; Diagnostic: n.a.
PROFET™: Smart High Side Switches; Package: PG-DSO-36; Channels: 8.0; RON @ Tj = 25°C : 200.0 mOhm; Recommended Operating Voltage Range: 11.0 - 45.0 V; IL(SC): 3.0 A; Diagnostic: n.a.
SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
Nch power MOS FET (Switching)
|
NEC Corp.
NEC[NEC]
|
| 4AK23 |
Silicon N-Channel Power MOS FET Array
|
HITACHI[Hitachi Semiconductor]
|
| 4AK25 |
Silicon N-Channel Power MOS FET Array
|
HITACHI[Hitachi Semiconductor]
|
| UPA1556A UPA1556AH |
N - CHANNEL POWER MOS FET ARRAY SWITCHING TYPE
|
NEC[NEC]
|
| UPA1560 PA1560 UPA1560H |
N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE
Compound Field Effect Transistor
|
NEC[NEC]
|
