| PART |
Description |
Maker |
| GM76C88AL-15 GM76C88AL-12 GM76C88AL GM76C88ALK-15 |
x8 SRAM
65,536 Bit static random access memory organized as 8,192 words by 8 bits using CMOS
65536 Bit RAM
|
etc
LG Semicon Co.,Ltd.
|
| LC33864P-80 LC33864PM-10 LC33864PM-70 LC33864PM-80 |
512K PSEUDO SRAM
512K (65536 words X 8 bits) Pseudo-SRAM
DRAGONBALL MX1 12k5536字8位）伪SRAM
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| TMM2018AP TMM2018AP-25 TMM2018AP-35 TMM2018AP-45 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply 16,384位高速，低功耗静态随机存取记2048字由8位，V电源供电
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| MSM54V12222A |
From old datasheet system
262214 Words x 12 Bits FIELD MEMORY
262,214 WORDS X 12 BITS FIELD MEMORY
|
OKI[OKI electronic componets]
|
| MB85411 |
65536 Words x 9-Bit
|
Fujitsu
|
| EDD2516AKTA-E |
256M bits DDR SDRAM (16M words x16 bits DDR400)
|
Elpida Memory
|
| EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits DDR400)
|
Elpida Memory
|
| EDS2532EEBH-9A EDS2532EEBH-9A-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
|
Elpida Memory, Inc.
|
| EDL5132CBMA-10-E |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
Elpida Memory, Inc.
|
| EDS2516CDTA-75-E EDS2516CDTA |
256M bits SDRAM (16M words x 16 bits)
|
ELPIDA[Elpida Memory]
|
| EDD1232AAFA-6B-E EDD1232AAFA-7A-E |
128M bits DDR SDRAM (4M words x 32 bits)
|
Elpida Memory, Inc.
|
| EDD1216AATA-7B-E EDD1216AATA EDD1216AATA-6B-E EDD1 |
128M bits DDR SDRAM (8M words x 16 bits)
|
ELPIDA[Elpida Memory]
|
