| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF2022-70 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
UHF power LDMOS transistor
|
Philips Semiconductors
NXP Semiconductors
|
| BLF1048 |
UHF power LDMOS transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BLC6G20LS-110 BLC6G20-110 |
UHF power LDMOS transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BLF3G22-30 |
UHF power LDMOS transistor
|
NXP Semiconductors
|
| BLF2043F/T3 BLF2043F |
UHF power LDMOS transistor
|
Philips
NXP Semiconductors N.V.
|
| BLF4G22-100 BLF4G22S-100 |
UHF power LDMOS transistor
|
NXP Semiconductors
|
| BLF2022-90 |
UHF power LDMOS transistor
|
NXP Semiconductors
Philips Semiconductors
|
| BLF4G10LS-160 |
UHF power LDMOS transistor
|
NXP Semiconductors
|
| BLF647 BLF647_3 BLF647-2015 |
From old datasheet system
UHF power LDMOS transistor
|
Quanzhou Jinmei Electro...
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
