PART |
Description |
Maker |
ZE-QCL-2S ZE-Q21-2G XE-NA277-2 ZE-Q21-2S ZV2-N21-2 |
General-purpose Enclosed Switches with High Breaking Capacity and High Durability
|
Omron Electronics LLC
|
CM501 |
The CM501 block saw is designed for durability and high performance for onsite wet and dry cutting
|
List of Unclassifed Man...
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EXD450 EXD470 EXD410 EXD420 |
High durability, high efficiency
|
Laird Tech Smart Techno...
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A3195EU A3195LLT 3195 A3195LU A3195 A3195ELT |
PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 保护,高温,霍尔效应锁存主动下拉 SENSOR IC CAC ANALOG OUT 8-DIP PROTECTED. HIGH-TEMPERATURE. HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN Protected,High-Temperature,Oper-Collector Hall-Effect Latch(保护型,工作于高温,霍尔效应锁存器( PROTECTED/ HIGH-TEMPERATURE/ HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN PROTECTED HIGH-TEMPERATURE HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN From old datasheet system
|
Allegro MicroSystems, Inc. ALLEGRO[Allegro MicroSystems]
|
NV23K07 NV23KQASDC10V NV23KASDC10V NV23KASDC12V NV |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc
|
NV23107 NV2312CSDC10VN NV2312CSDC10VS NV2312ASDC10 |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc
|
1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE (1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction) IC REG VOLT 4.8V 240MA SOT-23 Rectifiers(Rugged glass package/ using a high temperature alloyed construction) Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器(坚固的玻璃封装,采用高温合金建设 Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors] http:// NXP Semiconductors N.V.
|
D2F-01 D2F-01-T D2F-01-D D2F-01-D3 D2F-01F D2F-01F |
Incorporating a snapping mechanism made with two highly precise split springs that ensures long durability
|
Omron Electronics LLC
|
T2035H07 T2035H-6I-TR T2050H-6I-TR T2050H-6G-TR T2 |
600 V, 20 A, SNUBBERLESS TRIAC High temperature 20 A Snubberless TRIACs High temperature 20 A Snubberless⑩ TRIACs
|
STMicroelectronics
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
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