| PART |
Description |
Maker |
| MGP20N35CL-D |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
ON Semiconductor
|
| MGP20N40CL-D |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
ON Semiconductor
|
| AXS-7550-06-05 |
Clam shell design for easy open and close
|
Abracon Corporation
|
| MLP1N06CL MLP1N06CL-D |
SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level(1A, 62V, 逻辑电平，智能分立MOSFET)
SMARTDISCRETES TM MOSFET 1 Amp, 62 Volts, Logic Level N-Channel TO-220
SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level N-Channel TO-220
|
ONSEMI[ON Semiconductor]
|
| MLD1N06CL-D |
SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level N-Channel DPAK
|
ON Semiconductor
|
| BTA16-600BW3G BTA16-800BW3G BTA16-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA I-GT, 16 A I-T(RMS)
Triacs Silicon Bidirectional Thyristors
600V 16 A, 50mA Igt 3 Quadrant Internally Isolated Triac
|
ON Semiconductor
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFS45V2123A |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET
2.1-2.3 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC36V5964A C365964A |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
