PART |
Description |
Maker |
MGP20N40CL_D ON1864 MGP20N40CL |
SMARTDISCRETES Internally Clamped, N-Channel IGBT From old datasheet system 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT V ce(on) = 1.8 VOLTS 400 VOLTS (CLAMPED)
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ONSEMI[ON Semiconductor]
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MLD1N06CL-D |
SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level N-Channel DPAK
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ON Semiconductor
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Q4004LT Q6015LT Q6015LTH Q2010LT Q4015LT Q4015LTH |
Internally Triggered Triacs (4 A to 15 A) Power Driver IC; Driver Type:Sink; Source Output Current Max:600mA; Package/Case:22-DIP; Leaded Process Compatible:Yes; No. of Drivers:8; Output Current Max:600mA; Output Voltage Max:50V; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A5甲) Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A15甲)
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TECCOR[Teccor Electronics] Littelfuse, Inc. TE Connectivity, Ltd.
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BTA16-600SW3G BTA16-600SW3 |
Triac, 3 Quadrant Internally Isolated, 10 mA I-GT, 16 A I-T(RMS) 600V 16 A, 10mA Igt 3 Quadrant Internally Isolated Triac
|
On Semiconductor
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MGFK25V4045 K254045 |
14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET From old datasheet system 14.0~14.5GHZ BAND 0.3W INTERNALLY MATCHED GAAS FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFK30V4045 K304045 |
14.0~14.5GHZ BAND 1W INTERNALLY MATCHED GAAS FET From old datasheet system 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFK35V4045 K354045 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET From old datasheet system 14.0~14.5GHZ BAND 3W INTERNALLY MATCHED GAAS FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFC39V4450A C394450A |
From old datasheet system 4.4~5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET 4.4 - 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFC42V4450A C424450A |
From old datasheet system 4.4~5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET 4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC44V5964 C445964 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CAT93C56VE-1.8-GT3E CAT93C56ZD4E-1.8-GT2E CAT93C56 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
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ON Semiconductor Emulation Technology, Inc. Electronic Theatre Controls, Inc. HIROSE ELECTRIC Co., Ltd. Xiamen Hongfa Electroacoustic Co., Ltd. ITT, Corp.
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