| PART |
Description |
Maker |
| MCR12DSM-D |
Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
| MM1Z2V0 |
0.5W SILLICON PLANAR ZENER DIODES
|
Gaomi Xinghe Electronics Co., Ltd.
|
| 1SS350 |
Sillicon Epitaxial Schottky Barrier Diode
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS345 |
Sillicon Epitaxial Schottky Barrier Diode
|
Guangdong Kexin Industrial Co.,Ltd
|
| 2N3670 2N4103 2N3669 2N3668 |
12.5A silicon controlled rectifier. Vrm(non-rep) 330V.
12.5A SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State
GE[General Semiconductor]
GE Security, Inc.
|
| ES1D ES1B ES1_SERIES_1 ES1 ES1A ES1C |
From old datasheet system
SMA ultra fast low-loss controlled avalanche rectifiers(SMA超快速低损耗控制的雪崩整流
SMA ultra fast low-loss controlled avalanche rectifiers 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| 2N1795F 2N1798F 2N1792F 2N1793F 2N1794F 2N1797F 2N |
Silicon Controlled Rectifiers (fase)
Silicon Controlled Rectifier; Package: TO-83; IT (Av) (A): 70; VTM (V): 2.1; VGT (V): 3; IGT (µA): 70000; tq (nsec): 40000; Vrrm (V): 400; 110 A, SCR, TO-208AD
|
Microsemi Corporation
Microsemi, Corp.
|
| 2N640004 2N6401G 2N6426G 2N6405G 2N6400 2N6401 2N6 |
Silicon Controlled Rectifier 16A 400V
Darlington Transistors NPN Silicon
Silicon Controlled Rectifiers SCRs 16 AMPERES RMS 50 thru 800 VOLTS
|
ONSEMI[ON Semiconductor]
|
| BT151-600 BT151 |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.7@23AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
|
SemiWell Semiconductor
|
| BT152F-600 BT152F |
600V Vdrm 20A Sensitive Gate Silicon Controlled Rectifier, 1.7@40AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
|
SEMIWELL[SemiWell Semiconductor]
|
| BAS12 BAS11 |
Controlled avalanche rectifiers
|
Philips
NXP Semiconductors
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