| PART |
Description |
Maker |
| BFC52 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC16 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC48 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC43 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
Seme LAB
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| BFC11 |
4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
TT electronics Semelab Limited
Seme LAB
|
| GT60N321 EA09964 |
High Power Switching Applications The 4th Generation
From old datasheet system
|
Toshiba
|
| PS22053 |
1200V/10A low-loss 4th generation IGBT inverter bridge
|
Mitsubishi Electric Semiconductor
|
| GT30J322 |
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| USB2226 |
4th Generation USB 2.0 Flash Media Controller with Integrated Card Power FETs
|
SMSC Corporation
|
| USB2602-NE-03 USB2602-NU-03 |
4TH GENERATION USB2.0 FLASH MEDIA CONTROLLER WITH INTEGRATED CARD POWER FETS AND HS HUB 代USB2.0闪存介质控制器，它集成卡功率场效应管和HS集线
|
http://
SMSC, Corp.
|
| GT50G321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
|
TOSHIBA
|
