| PART |
Description |
Maker |
| MAX914 MAX9140 MAX9140EUK-T MAX9140EXK-T MAX9140-M |
"40ns, Single, Low-Power SHDN & LE, 3V/ 5V, TTL Comparator"
"40ns, Single, Low-Power, 3V/5V, TTL Comparator"
"40ns, Dual, Low-Power, 3V/5V, TTL Comparator"
40ns Low-Power 3V/5V Rail-to-Rail Single-Supply Comparators
40ns, Low-Power, 3V/5V, Rail-to-Rail Single-Supply Comparators 0ns，低功耗，3V/5V，轨至轨单电源比
|
Maxim Integrated Produc...
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
| V53C16256SH V53C16256 |
256K X 16 FAST PAGE MODE CMOS DYNAMIC RAM WITH SELF REFRESH
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| HM5164165F HM5164165FJ-6 HM5165165FJ-6 HM5164165FJ |
(HM5164165F / HM5165165F) 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh 6400 EDO公司的DRAM Mword x 16位）8K的refresh/4k刷新
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| M466F0804DT1-L |
8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh
|
SAMSUNG[Samsung semiconductor]
|
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY |
256k x 16 Bit EDO DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HM5112805FLTD-6 HM5113805FLTD-6 |
128M EDO DRAM (16-Mword × 8-bit) 8k refresh/4k refresh
128M EDO DRAM (16-Mword 隆驴 8-bit) 8k refresh/4k refresh
|
Elpida Memory
|
| HM5165405FLTT-5 HM5165405FLTT-6 HM5164405FTT-5 HM5 |
64 M EDO DRAM (16-Mword × 4-bit) 8 k Refresh/4 k Refresh
64 M EDO DRAM (16-Mword 隆驴 4-bit) 8 k Refresh/4 k Refresh
|
http://
Elpida Memory
|
| MSC23B236D-XXDS8 MSC23B236D-XXBS8 MSC23B236D B236D |
2,097,152-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
2097152-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
From old datasheet system
RECTIFIER FAST-RECOVERY SINGLE 3A 300V 125A-ifsm 1.3V-vf 40ns 5uA-ir DO-201AD 500/BULK
RECTIFIER FAST-RECOVERY SINGLE 3A 300V 125A-ifsm 1.3V-vf 40ns 5uA-ir DO-201AD 1.2K/REEL-13
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| GS74116A GS74116ATP-10 GS74116AJ-12I GS74116AJ-12I |
256K X 16 STANDARD SRAM, 7 ns, PDSO44
256K x 16 4Mb Asynchronous SRAM 256K × 16 4Mb的异步SRAM
RES, MTF 20K 1/4W 2%
ER 16C 16#16 SKT PLUG
ER 13C 3#8 3#12 7#16 SKT PLUG
10ns 256K X 16 4Mb Asynchronous SRAM
256K X 16 STANDARD SRAM, 7 ns, PBGA48
|
SRAM
Electronic Theatre Controls, Inc.
GSI[GSI Technology]
N.A.
ETC
|
