| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| 0910-60M |
60 Watts - 40 Volts, 150us, 5% Radar 890 - 1000 MHz
P-Band 890-1000 MHz; P(out) (W): 60; P(in) (W): 9.5; Gain (dB): 8; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 5; Case Style: 55AW-1 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| 2SC4871 2SC4871-5 |
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 20MA I(C) | SOT-323
UHF to S Band Low-Noise Amp, OSC Applications
|
Sanyo Semicon Device
|
| MT6C03AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6L61AE |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MRF9130LSR3 MRF9130L MRF9130LR3 |
LEAD FREE A3932SEQ-T WITH TAPE & REEL UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER FIELD EFFECT TRANSISTORS
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
|
| 2SC2643 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3775 |
UHF Low-Noise Amp, Wide-Band Amp Applications
|
Sanyo Semicon Device
|
| 2SC3778 |
UHF Low-Noise Amp, Wide-Band Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| MRF607 |
UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
