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2N5337A-220M - SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE NPN Epitaxial Base Transistor(TO220 Metal PackageNPN外延晶体管(TO220 金属封装,高可靠性)) DIODE SCHOTTKY SINGLE 25V 150mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-523 3K/REEL

2N5337A-220M_371612.PDF Datasheet

 
Part No. 2N5337A-220M
Description SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE
NPN Epitaxial Base Transistor(TO220 Metal PackageNPN外延晶体管(TO220 金属封装,高可靠性))
DIODE SCHOTTKY SINGLE 25V 150mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-523 3K/REEL

File Size 16.48K  /  2 Page  

Maker


SEME-LAB[Seme LAB]
TT electronics Semelab Limited



Homepage http://www.semelab.co.uk
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 Full text search : SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE NPN Epitaxial Base Transistor(TO220 Metal PackageNPN外延晶体管(TO220 金属封装,高可靠性)) DIODE SCHOTTKY SINGLE 25V 150mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-523 3K/REEL


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