| PART |
Description |
Maker |
| GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns
4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
|
Hynix Semiconductor
|
| GM71C17400C GM71C17400CJ GM71C17400CLJ-5 GM71C1740 |
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
| TC514102J TC514102J10 TC514102J80 TC514102Z10 TC51 |
4,194,304 x 1 BIT DYNAMIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| HM5116400S-5 HM5116400S-7 HM5116400 HM5116400TS-5 |
4,194,304 - WORD X 4-BIT DYNAMIC RAM
|
HITACHI[Hitachi Semiconductor]
|
| TC5117400BST-70 TC5117400BST-60 |
4,194,304 WORD X 4 BIT DYNAMIC RAM
|
Toshiba Corporation
|
| THMY644071BEG |
4/194/304-WORD BY 64-BIT SNCHRONOUS DRAM MODULE
4,194,304-WORD BY 64-BIT SNCHRONOUS DRAM MODULE
|
TOSHIBA[Toshiba Semiconductor]
|
| M5M44170-10S M5M44170-7 M5M44170-8 M5M44170AJ M5M4 |
FAST PAGE MODE 4,194,304-BIT (262,144-WORD BY 16-BIT) DYNAMIC RAM
|
Mitsubishi Electric Semiconductor
|
| FM27C040 FM27C040X120 FM27C040X150 FM27C040X90 |
4,194,304-Bit (512K x 8)High Performance CMOS EPROM
|
Fairchild Semiconductor
|
| AK591024 AK59256 |
4,194,304 Word x 9 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
http://
|
