| PART |
Description |
Maker |
| C62122-A132-B95 B84115-E-A110 B84115-E-A30 B84115- |
SIFI-E for high insertion loss Rated voltage 250 V~, 50/60 Hz Rated current 3 A to 10 A
|
EPCOS AG
EPCOS[EPCOS]
|
| B84110-B-A14 B84110-B |
Power line filter for single-phase systems Rated voltage 250 V~, 50/60 Hz Rated current 1,4 A
|
EPCOS[EPCOS]
|
| IRFV360 |
400V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|
| B84110-A-A5 B84110-A-A10 B84110-A-A40 B84110-A-A60 |
Power line filters for single-phase systems Rated voltage 250 V~, 50/60 Hz Rated current 0,5 A to 6 A 单相额定电压250系统的电源线滤波器，50/60赫兹额定电流0.5 A
|
EPCOS AG
|
| B82422-T3820-_ B82422-T1102-_ B82422-T1103-_ B8242 |
INDUCTOR 1210T 270UH
Size 1210 (EIA) or 3225 (IEC) Rated inductance 0,010 to 330 mH Rated current 40 to 450 mA
|
EPCOS[EPCOS]
EPCOS AG
|
| BUZ111 BUZ111S Q67040-S4003-A2 |
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SPP08P06P09 SPP08P06PG |
8.8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
P-Channel Enhancement mode Avalanche rated dv/dt rated
|
Infineon Technologies AG
|
| IRFAG40 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE)
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
|
International Rectifier
|
| HIP5010 HIP5010IS HIP5010IS1 HIP5011 HIP5011IS HIP |
7V, 17A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge
FPGA - 1000000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN HB BASED PRPHL DRVR WITH PWM, PSSO7
Synchronous Half-Bridge Driver(同步半桥驱动 同步半桥驱动器（同步半桥驱动器）
7V, 17A SynchroFETComplementary Drive Synchronous Half-Bridge
7V, 17A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge
From old datasheet system
7V, 17A SynchroFET?Complementary Drive Synchronous Half-Bridge
7V, 17A SynchroFET Complementary Drive Synchronous Half-Bridge
7V/ 17A SynchroFET Complementary Drive Synchronous Half-Bridge
7V, 17A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| MMDF2C03HD ON2158 MMDF2C03HD-D |
Complementary TMOS Field Effect Transistors
COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
