| PART |
Description |
Maker |
| SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
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| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
| 2SK231202 2SK231207 2SK2312 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−?MOSV) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−ば-MOSV)
|
Toshiba Semiconductor
|
| 2SJ619 |
ZD-3.6V- 1 W TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV) Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
|
Toshiba Corporation Toshiba Semiconductor Sanyo Semicon Device
|
| SSM5N05FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC MOTOROLA[Motorola, Inc] Motorola Semiconductor Motorola, Inc.
|
| 2SK3543 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
|
Toshiba Semiconductor
|
| 2SK2613 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM6K08FU |
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category High Speed Switching Applications CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category
|
TOSHIBA[Toshiba Semiconductor]
|
| BC264A BC264B BC264C BC264D BC264 |
N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS N Channel Junction Field Effect Transistors
|
NXP Semiconductors Philips Semiconductors
|
| PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system N-channel enhancement mode field-effect transistor
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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