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MTD6N15 - Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM From old datasheet system

MTD6N15_359576.PDF Datasheet

 
Part No. MTD6N15 ON2513 MTD6N15-D
Description Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM
From old datasheet system

File Size 231.61K  /  10 Page  

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ON Semiconductor
MOTOROLA[Motorola, Inc]



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Part: MTD6N10
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 Full text search : Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM From old datasheet system
 Product Description search : Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM From old datasheet system


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