| PART |
Description |
Maker |
| MRFIC1859 |
Dual-Band GSM 3.6V Integrated RF Power Amplifier(GSM 3.6V集成式射频功
|
Motorola, Inc.
|
| Q62702G0077 CGY0918 |
GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MRFIC1859 |
Dual Band / GSM 3.6V Integrated Power Amplifier
|
Motorola
|
| AWT6172RM33P8 AWT6172RM33P9 AWT6172HM33P8 AWT6172H |
GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| MMM6035 |
Quad-Band GSM/GPRS PA Module with Integrated Power Control
|
Freescale Semiconductor, Inc
|
| CGY98 |
GaAs MMIC (Broadband Power Amplifier [ 800..2000 Mhz ] GSM,AMPS or PCN Operating voltage range: 2.7 to 5.0 V)
GaAs MMIC (Broadband Power Amplifier [ 800..2000 Mhz ] GSM/AMPS or PCN Operating voltage range: 2.7 to 5.0 V)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
|
| Q62702G63 CGY96 |
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MRF18085AL |
1805鈥?880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N鈥揅hannel RF Power MOSFETs
|
MOTOROLA
|
| MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRFIC1818 |
1700-1900 MHz MMIC DCS1800/PCS1900 INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
|
MOTOROLA[Motorola, Inc]
|
