| PART |
Description |
Maker |
| M63832GP M63832KP |
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
|
Mitsubishi Electric Semiconductor
|
| M63823FP M63823P |
(M63823xP) 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
|
Mitsubishi Electric
|
| M63827WP |
(M63827xP) 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric
|
| M63824KP |
(M63824xP) 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
|
Mitsubishi Electric
|
| M63824GP M63824KP |
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
|
| M54563FP |
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE
|
Mitsubishi Electric Semiconductor
|
| M54562P M54562P/FP |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
|
| M54562P12 M54562P |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE 8个单00mA的源类型达林顿晶体管阵列钳位二极
|
Mitsubishi Electric Semiconductor
|
| LB1274 |
6-Unit, Darlington Transistor Array
|
SANYO[Sanyo Semicon Device]
|
| 2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五（巴西）总裁| 10A条一（c）|3
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|
| IR3403 |
5-Unit 400mA Darlington Transistor Array
|
Sharp
|
