| PART |
Description |
Maker |
| K7R640982M K7R643682M K7R641882M |
2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7I643682M07 K7I641882M |
2Mx36 & 4Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| IS61DDPB22M36A/A1/A2 IS61DDPB24M18A IS61DDPB24M18A |
4Mx18, 2Mx36 72Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| IS61QDPB42M36A2 |
2Mx36 and 4Mx18 configuration available
|
Integrated Silicon Solu...
|
| UPD44325092BF5-E33-FQ1 PD44325092B-15 |
4M X 9 QDR SRAM, 0.45 ns, PBGA165
36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| K7Q161852A |
(K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|
| CY7C1911CV18 |
(CY7C1x1xCV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
| K7Q161862B |
(K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|
| PD46365092BF1-E40-EQ1 PD46365182BF1-E33Y-EQ1 PD463 |
36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28
x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| EDI8L24129V-BC EDI8L24129V12BI EDI8L24129V EDI8L24 |
10ns; 3.3V power supply; 128K x 24 SRAM
SRAM MCP
SDR Connector; No. of Contacts:26; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes
128K X 24 SRAM 3.3 VOLT 128K的X 24 SRAM.3
15ns; 3.3V power supply; 128K x 24 SRAM
|
Electronic Theatre Controls, Inc.
White Electronic Designs
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
