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K7R643684M - 2Mx36 & 4Mx18 QDRTM II b4 SRAM

K7R643684M_366826.PDF Datasheet


 Full text search : 2Mx36 & 4Mx18 QDRTM II b4 SRAM
 Product Description search : 2Mx36 & 4Mx18 QDRTM II b4 SRAM


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PART Description Maker
K7R640982M K7R643682M K7R641882M 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
K7R643682M07 K7R640982M K7R643682M-FI160 K7R643682 2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM
2M X 36 QDR SRAM, 0.5 ns, PBGA165
2M X 36 QDR SRAM, 0.45 ns, PBGA165
Samsung semiconductor
UPD44325084BF5-E33-FQ1 PD44325084BF5-E50-FQ1-A PD4 4M X 8 QDR SRAM, 0.45 ns, PBGA165
36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
Renesas Electronics Corporation
K7R320982M K7R321882 K7R321882M K7R323682 K7R32368    1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 1Mx36
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
PD46365092BF1-E40-EQ1 PD46365182BF1-E33Y-EQ1 PD463 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
Renesas Electronics Corporation
K7R161882B K7R163682B K7R160982B 512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI Low Power Slow SRAM - 256Kb
SWITCH, REED SPST-NO 10W SMD
QSW-REED,10MM,10W,SMD
9 POS FR-4 SIP SOCKET
x8|3V|70/85/100|Low Power Slow SRAM - 256K
x8|3.3V|70/85/100|Low Power Slow SRAM - 256K
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
x8 SRAM x8的SRAM
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Analog Devices, Inc.
Panasonic Industrial Solutions
R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR 4M High Speed SRAM (512-kword x 8-bit)
Memory>Fast SRAM>Asynchronous SRAM
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C01 Memory>Fast SRAM>Asynchronous SRAM
4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
RENESAS[Renesas Electronics Corporation]
 
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