| PART |
Description |
Maker |
| APT2X61D100J APT2X60D100J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1000V 60A
|
ADPOW[Advanced Power Technology]
|
| APT2X30D60J APT2X31D60J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 600V 30A
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| APT2X31D120J APT2X30D120J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1200V 30A
CONNECTOR ACCESSORY 双超快软恢复整流二极
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| APT2X100S20J APT2X101S20J |
HIGH VOLTAGE SCHOTTKY DIODES 高压肖特基二极管
CONNECTOR ACCESSORY 高压肖特基二极管
DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES 200V 100A
|
Microsemi, Corp.
Advanced Power Technology, Ltd.
|
| STE150N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
|
STMicroelectronics
|
| 907-0010 912-0120 914-0040 914-0070 914-0140 912-0 |
PUNCH&DIE SET 3-12MM
PUNCH&DIE 10.0MM CIRCULAR
PUNCH&DIE 16.5MM CIRCULAR
PUNCH&DIE 25.0MM CIRCULAR
PUNCH&DIE 12.0MM CIRCULAR
PUNCH&DIE 9.0MM CIRCULAR
PUNCH&DIE 20.0MM CIRCULAR
PUNCH&DIE 12.5MM CIRCULAR
STRIPPER 37.0 X 13.7 D CON
STRIPPER 31.75MM DIAMETER 低产31.75MM直径
LOUVRE TOOL 卢浮宫工
PUNCH&DIE 10.0MM CIRCULAR
STRIPPER 67.2 X 16.5 D CON
|
Peregrine Semiconductor, Corp.
Molex, Inc.
|
| STE139N65M5 |
N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh(TM) V Power MOSFET in ISOTOP package
|
ST Microelectronics
|
| EF9365P EF9366P |
Triple 3-Input NOR Gate; ; Package: Die (Military Visual)
Quad 2-Input OR Gate; Temperature Range: -; Package: 14-SBDIP
|
|
| BZT52C4V7T |
Planar Die Construction Ultra-Small Surface Mount Package
|
TY Semiconductor Co., Ltd
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
