| PART |
Description |
Maker |
| 2N2857 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| 2N5031 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW[Advanced Power Technology]
|
| MRF3866GR2 MRF3866GR1 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| 2N6304 MSC1323 |
From old datasheet system
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
| 2N4427 MSC1301 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
From old datasheet system
|
MICROSEMI[Microsemi Corporation]
|
| 2N5179 MSC1305 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
From old datasheet system
|
Microsemi Corporation
|
| MRF914 MSC1325 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
From old datasheet system
|
Microsemi Corporation
|
| MRF586 MSC1320 |
From old datasheet system
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
| MRF1001 MRF1001A MSC1311 |
From old datasheet system
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
| 2SC5195 2SC5195-T1 2SC5195NE68819 |
Discrete
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 微波低噪声放大器NPN硅外延晶体管
|
NEC Corp.
NEC, Corp.
|
| MRF951 |
CAP CERAMIC 4PF 25V C0G 0201
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Microsemi Corporation
|
