| PART |
Description |
Maker |
| 0475960132 |
0.9144mm (.036) by 0.9144mm (.036) Pitch LGA 1156 Desktop PC CPU Socket, 0.38μm (15μ) Gold (Au) Plating, with Pick-and-Place Cover, 1156Circuits, Leadfree
|
Molex Electronics Ltd.
|
| 0475960133 |
0.9144mm (.036) by 0.9144mm (.036) Pitch LGA 1156 Desktop PC CPU Socket,0.76μm (30μ) Gold (Au) Plating, with Pick-and-Place Cover, 1156Circuits, Leadfree
|
Molex Electronics Ltd.
|
| HUF75321D3 HUF75321D3S 75321D |
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SJ555 2SJ555-E |
60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET
Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
| SC200..5.SERIES |
SCHOTTKY DIE 200 x 200 mils
|
International Rectifier
|
| APT20M36BLL APT20M36SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 200V 65A 0.036 Ohm
|
Advanced Power Technology
|
| PUMA2U8002I-25 PUMA2U8002I-20 PUMA2U8002M-15 PUMA2 |
DIE SALE, 1.8V,11MIL(SERIAL EE)
x32 EPROM Module
10MS, DIE, 2.7V, 11 MILS THICKNESS(SERIAL EE)
8-TSSOP, PB/HALO FREE,NiPdAu, 1.8V(SERIAL EE)
8 TSSOP, PB/HALO FREE, IND TEMP, 1.8V(SERIAL EE) X32号存储器模块
8-SAP,PB/HALO FREE,IND TEMP,2.7V(SERIAL EE) X32号存储器模块
|
NXP Semiconductors N.V.
Amphenol, Corp.
|
| AUIRF7640S2TR AUIRF7640S2TR1 |
DirectFET Power MOSFET
5.8 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
DirectFETPower MOSFET
|
International Rectifier
|
| SB073P150-W-AG SB073P150-W-AG_AL SB073P150-W-AG/AL |
Schottky Barrier Diode Wafer 73 Mils, 150 Volt, 5 Amp
|
TRANSYS Electronics Limited
|
| SB051C020-1-W-AG |
Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF.
|
TRANSYS Electronics Limited
|
| SB039C015-1-W-AG |
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF.
|
TRANSYS Electronics Limited
|
| SB051C015-1-W-AG |
Schottky cr Barrier Diode Wafer 51 Mils, 15 Volt, 1 Amp, 0.30VF.
|
TRANSYS Electronics Limited
|
