| PART |
Description |
Maker |
| M366S2953MTS-C75 M366S2953MTS-C1L M366S2953MTS M36 |
128Mx64 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
PC133/PC100 Unbuffered DIMM
From old datasheet system
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M368L2923MT1 |
128Mx64 DDR SDRAM 184pin DIMM based on 64Mx8 Data Sheet
|
Samsung Electronic
|
| HYMD5126468 HYMD512646L8 |
128Mx64|2.5V|K/H/L|x16|DDR SDRAM - Unbuffered DIMM 1GB 128Mx64 | 2.5V的| /升| x16 | DDR SDRAM无缓冲DIMM 1GB
|
Lattice Semiconductor, Corp.
|
| KMM366S1623AT-G8 KMM366S1623AT KMM366S1623AT-G0 KM |
16M x 64 SDRAM DIMM
16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M366S3253BTS-C75 M366S3253BTS |
32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 128MX72SDRAMINTEL1.2VERBASE |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet
|
Samsung Electronic
|
| HMT42GR7CMR4C-G7 HMT351R7CFR4C-H9 HMT42GR7CMR4C-H9 |
DDR3 SDRAM Registered DIMM Based on 2Gb C-die
|
Hynix Semiconductor
|
| HYMD132645BL8J-J HYMD116G725BL8-M HYMD116G725BL8-L |
32Mx64|2.5V|J|x16|DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
|
Hynix Semiconductor
|
| HMT82GV7MMR4A HMT82GV7MMR4A-G7 HMT82GV7MMR4A-H9 HM |
DDR3L SDRAM VLP Registered DIMM Based on 4Gb M-die
|
Hynix Semiconductor
|
| NT128D64S88A2GM-75B NT128D64S88A2GM-7K NT128D64S88 |
128Mb unbuffered DDR SO-DIMM module based on 16Mx8 SDRAM
|
NANYA
|
| M381L3313CT1 |
32Mx72 DDR SDRAM 184pin DIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
