| PART |
Description |
Maker |
| 2SJ327 2SJ327-Z 2SJ327-Z-T1 2SJ327-Z-E2 2SJ327-Z-T |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0620-4 00; No. of Positions: 6; Connector Type: Panel
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
P-channel enhancement type
|
NEC Corp.
NEC[NEC]
|
| 2SJ220 2SJ220L 2SJ220S |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| IRFR3710Z IRFU3710Z |
100V Single N-Channel Automotive HEXFET Power MOSFET in a I-Pak package
AUTOMOTIVE MOSFET
Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resi
|
IRF[International Rectifier]
|
| DMP210DUFB4-7 DMP210DUFB4-7B |
Discrete - MOSFETs - MOSFET Master Table - P Channel - P Channel 20V
|
Diodes
|
| IXTT110N10P IXTQ110N10P |
Discrete MOSFETs: Standard N-channel Types
N-Channel Enhancement Mode
|
IXYS Corporation
|
| IXTQ96N15P IXTT96N15P |
Discrete MOSFETs: Standard N-channel Types
N-Channel Enhancement Mode Preliminary Data Sheet
|
IXYS Corporation
|
| CMLM0205 |
MULTI DISCRETE MODULESURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE 280 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor, Corp.
|
| IXTX24N100 |
Discrete MOSFETs: Standard N-channel Types
|
IXYS
|
| TSM4NB60CH TSM4NB60CI TSM4NB60CP TSM4NB60CZ |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
| IXTQ62N15P |
Discrete MOSFETs: Standard N-channel Types
|
IXYS
|
