PART |
Description |
Maker |
ISR2800DESRH ISR2800DHURH ISR2800DHDRH ISR2805DHDR |
2-OUTPUT 2.5 W DC-DC REG PWR SUPPLY MODULE Adj, Radiation hardened high-power, high efficiency DC-DC power converter 5V, Radiation hardened high-power, high efficiency DC-DC power converter
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MS KENNEDY CORP M.S. Kennedy Corp.
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TDA4863-2 TDA4863-2G Q67040-S4620 Q67040-S4621 |
Power Control ICs - PFC-IC for high Output Power in SMD-Package Power Factor Controller IC for High Power Factor and Low THD
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INFINEON[Infineon Technologies AG]
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AWT6106 |
The AWT6106 is a 3.5V (3.0V to 4.2V) high power, high efficiency, three stage power amplifier module for Dual Mode CDMA/PCS wireless ...
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Anadigics Inc
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EMC21L1004 EMC21L1004GN |
High Voltage - High Power GaN-HEMT Power Amplifier Module
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EUDYNA[Eudyna Devices Inc]
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JYDC-7-1HP |
High Power Directional Coupler 50?/a> 30 to 500 MHz From old datasheet system High Power Directional Coupler 50з 30 to 500 MHz High Power Directional Coupler 50 30 to 500 MHz AC-DC Converter, 75 Watt Input VAC: 90~260, Output VDC: 12, Max Output Current(A): 6.25, Package: U Bracket, Isolation(VDC): 3000, Operating Temp.: -25C to 50C, Low Ripple & Noise, High Efficiency up to 80%, Auto-Recovery, Single Outputs
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http:// MINI[Mini-Circuits]
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AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
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International Rectifier
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2SB1151-T60-T 2SB1151L-T60-T 2SB1412-TN3-F-R 2SB14 |
NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS HIGH VOLTAGE HIGH SPEED SWITCHING BIPOLAR POWER GENERAL PURPOSE TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
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友顺科技股份有限公司 UTC[Unisonic Technologies]
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MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS
|
ON Semiconductor
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AWT6114 |
The AWT6114 is a high power, high efficiency amplifier module for Korean Band PCS CDMA wireless handset applications. Power Amplifiers KPCS CDMA 3.4V/28dBm Linear Power Amplifier Module
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Anadigics Inc ANADIGICS, Inc
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W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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CREE POWER
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