| PART |
Description |
Maker |
| U16C60 U16C40 U16C50 U16C30 |
POWER RECTIFIERS(16A/300-600V)
POWER RECTIFIERS(16A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| H16C60 H16C30 H16C40 H16C50 |
HIGH EFFICIENCY RECTIFIERS(16A,300-600V) 高效率整流二极管6A300 - 600V的）
HIGH EFFICIENCY RECTIFIERS(16A/300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| U08A40 U08A60 U08A30 U08A50 |
FAST RECTIFIERS(8A/300-600V)
FAST RECTIFIERS(8A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| U15A60 U15A50 U15A30 U15A40 |
FAST RECTIFIERS(15A/300-600V)
FAST RECTIFIERS(15A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| H30D60 H30D30 H30D40 H30D50 |
HIGH EFFICIENCY RECTIFIERS(30A/300-600V)
HIGH EFFICIENCY RECTIFIERS(30A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| 7MBP150RA060 |
AC MOTOR CONTROLLER, 300 A, XMA22
IGBT-IPM R series 600V / 150A 7 in one-package
|
FUJI ELECTRIC CO LTD
ETC
List of Unclassifed Manufacturers
|
| TC1303B-AA1EUNTR TC1303B-AA0EUN TC1303B-AA2EUN TC1 |
500 mA Synchronous Buck Regulator, 300 mA LDO with Power-Good Output 500毫安同步降压稳压器，300 mA的LDO具有电源就绪输出
|
Yageo, Corp.
Microchip Technology, Inc.
Microchip Technology Inc.
|
| IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A)
CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IRFIBC30G IRFIBC30 |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)
Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=2.5A)
|
IRF[International Rectifier]
|
