| PART |
Description |
Maker |
| TISP5110H3BJ TISP5115H3BJ TISP5190H3BJ |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR
|
TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
|
| TISP6151X |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Bourns Inc.
|
| TISP61089 |
DUAL FORWARD-CONDUCTING-P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Power Innovations Ltd
Power Innovations Limited
Power Innovations International, Inc.
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
| CLY32-00 CLY32-05 CLY32-10 CLY32 |
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 伊雷尔C波段砷化镓功率场效应
HiRel C-Band GaAs Power-MESFET
|
INFINEON[Infineon Technologies AG]
|
| IHW40N60R |
Reverse conducting IGBT
|
Infineon Technologies A...
|
| IHD06N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IKW30N65WR5 IKW30N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
