| PART |
Description |
Maker |
| ML774F11F ML776H11F |
InGaAsP - MQW - DFB LASER DIODES
|
Mitsubishi Electric Corporation
|
| NX6410GH NX6410GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
| ML7924 ML7XX4 |
From old datasheet system
InGaAsP-MQW-DFB LASER DIODES
|
Mitsubishi Electric Semiconductor
|
| ML7XX11 ML776H11F ML774F11F |
From old datasheet system
InGaAsP-MQW-DFB LASER DIODES
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
http://
|
| ML976H11F ML9XX11 |
InGaAsP-MQW-DFB LASER DIODES InGaAsP的量子阱- DFB激光器
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ML725C8F ML701B8R ML720J8S ML720K8S ML725B8F ML725 |
InGaAsP- MQW FP laser diode
InGaAsP-MQW-FP LASER DIODES
InGaAsP - MQW - FP LASER DIODES
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| NX8313UD NX8313UD-AZ |
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
|
California Eastern Laboratories
|
| NX6508 |
NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
|
California Eastern Laboratories
|
| NX8315XC |
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
|
Renesas Electronics Corporation
|
| NX6314EH |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
California Eastern Labs
|
| NX6306 NX6306SK NX6306SH NX6306GH NX6306GK |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
|
California Eastern Labs
|
