| PART |
Description |
Maker |
| 2N3896 2N3899 2N6171 2N6172 2N6173 2N6174 2N3870 2 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 可控硅整流器（反向阻断三极晶闸管
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 35 A, 400 V, SCR, TO-203AA
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 35 A, 100 V, SCR, TO-203AA
(2N38xx) Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| 2N1795F 2N1798F 2N1792F 2N1793F 2N1794F 2N1797F 2N |
Silicon Controlled Rectifiers (fase)
Silicon Controlled Rectifier; Package: TO-83; IT (Av) (A): 70; VTM (V): 2.1; VGT (V): 3; IGT (µA): 70000; tq (nsec): 40000; Vrrm (V): 400; 110 A, SCR, TO-208AD
|
Microsemi Corporation
Microsemi, Corp.
|
| MCR12DSMT4 MCR12DSNT4G MCR12DSM MCR12DSMT4G MCR12D |
Sensitive Gate Silicon Controlled Rectifiers(???纭??娴??)
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
| BT151-600 BT151 |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.7@23AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
|
SemiWell Semiconductor
|
| C106 C106S C106A C106B C106C C106D C106E C106F C10 |
4A sensitive-gate silicon controlled rectifier. Vrrm 700V.
4-A Sensitive-Gate Silicon Controlled Rectifiers
|
General Electric Solid State
GESS[GE Solid State]
http://
|
| WCU4C60S |
Silicon Controlled Rectifiers
|
Shenzhen Winsemi Microe...
|
| MCR103 MCR102 |
Silicon Controlled Rectifiers
|
MOTOROLA[Motorola, Inc]
|
| MCR72-2 MCR72-3 MCR72-6 MCR72-4 |
Silicon Controlled Rectifiers
|
New Jersey Semi-Conductor P...
|
| TIC108 TIC108D TIC108M TIC108N TIC108S |
SILICON CONTROLLED RECTIFIERS
|
Power Innovations Ltd
Power Innovations Limited
|
| MCR68 |
Silicon Controlled Rectifiers
|
ON Semiconductor
|
| WCPA25C60 |
Silicon Controlled Rectifiers
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
