| PART |
Description |
Maker |
| BS62LV2563 |
Asynchronous 256K(32Kx8) bits Static RAM
From old datasheet system
|
BSI
|
| LC35W1000BTS-70U LC35W1000B LC35W1000BTS-10U LC35W |
Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| BS616LV1011 BS616LV1011EIP70 BS616LV1011AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| BS616LV1013 BS616LV1013EIP70 BS616LV1013AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, Inc.
BSI[Brilliance Semiconductor]
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| BS616LV4018 BS616LV4018EI BS616LV4018AC BS616LV401 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM56 × 16
Asynchronous 4M(256Kx16) bits Static RAM
From old datasheet system
|
Electronic Theatre Controls, Inc.
Brilliance Semiconductor
BSI
ETC[ETC]
List of Unclassifed Manufacturers
|
| IDT72T51333 IDT72T51353 IDT72T51343 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
Integrated Device Technology, Inc.
|
| EDS2532AABJ-75-E EDS2532AABJ-75L-E |
256M bits SDRAM (8M words 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位）
256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| BS62LV4007 BS62LV4007TIP70 BS62LV4007EC BS62LV4007 |
Asynchronous 4M(512Kx8) bits Static RAM
High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel
surface mount silicon Zener diodes
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| TC58FVB160FT-85 TC58FVT160FT-85 TC58FVB160FT-12 TC |
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
TOSHIBA
|
| EDD2508AKTA-5C-E EDD2508AKTA-5B-E EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
