| PART |
Description |
Maker |
| GE28F256L18B85 GE28F256L18T85 GE28F128L18T85 PH28F |
1.8V, 85ns, 256Mbit StrataFlash Wireless Memory
1.8V, 85ns, 128Mbit StrataFlash Wireless Memory
1.8V, 85ns, 128Mbit lead-free StrataFlash Wireless Memory
|
Intel
|
| HY64LD16322M-DF85I HY64LD16322M-DF85E |
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC
x16|2.5(VDD)2.5(VDDQ)V|85|Pseudo SRAM - 32M x16 | 2.5（VDD）在2.5（提供VDDQ）V | 85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| M9280 |
VDD CONTROL
|
ETC
List of Unclassifed Manufacturers
|
| EM44DM0888LBA EM44DM0888LBA-187F EM44DM0888LBA-25F |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| EM47EM3288SBA EM47EM3288SBA-125 EM47EM3288SBA-150 |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| MT8812 |
8 x 12 Analog Switch Array with low on-resistance, for VDD = 4.5V to 14.5V
|
Zarlink Semiconductor
|
| 2SK3305 |
Low gate charge QG = 13 nC TYP. (VDD = 400V, VGS = 10 V, ID = 5.0A)
|
TY Semiconductor Co., L...
|
| MT8815 |
8 x 12 Analog Switch Array with Low On-resistance, for (VDD - VEE) = 4.5 V to 13.2 V
|
Zarlink Semiconductor
|
| EDI9F416128C-BN EDI9F416128C85BNC |
85ns; 5V power supply; 4 x 128K x 16 static RAM CMOS module
Differential Receiver/Equalizer; Temperature Range: -40°C to 85°C; Package: 16-QSOP T&R
|
White Electronic Designs
|
| 1050278001 SD-105027-801 |
1.10mm(.043"), 0.75mm(.030"), 0.70mm(.028") Pitch microSD Card Header with Detect Switch (VDD), Height 1.70mm
1.10mm(.043), 0.75mm(.030), 0.70mm(.028) Pitch microSD Card Header with Detect Switch (VDD), Height 1.70mm
|
Molex Electronics Ltd.
|
| DRF1203 |
RF Hybrid with driver MOSFET; P(out) (W): 650; fO (MHz): 30; VDD (V): 15; BVDSS (V): 1000; RqJC (ºC/Watt): 0.14; Case Style: T2B; COO: D-E 8 A BUF OR INV BASED MOSFET DRIVER, DMA10
|
Microsemi, Corp.
|
| CY2212ZXC-2T |
Direct RambusT 82; Clock Generator (Lite); VDD: 3.3 V; Input Frequency: 14.0625 MHz to 18.75 MHz; Output Frequency: 9.375 MHz to 400 MHz; # Out: 3
|
CYPRESS SEMICONDUCTOR CORP
|
