| PART |
Description |
Maker |
| IRL640A |
Power MOSFET - BVdss=200V Rds(on)=0.18 ohn Id = 18A
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP9140NPBF IRFP9140NPBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRF7342QPBF10 IRF7342QTRPBF |
HEXFET庐 Power MOSFET
HEXFET? Power MOSFET
Advanced Process Technology
|
International Rectifier
|
| IRF1010NLPBF IRF1010NSPBF IRF1010NSTRRPBF IRF1010N |
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
Advanced Process Technology
|
International Rectifier
|
| IRFPS3810PBF IRFPS3810PBF-15 |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| SFI9610 |
Advanced Power MOSFET 1.75 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
|
| IRLM210 IRLM210A IRLM210ATF |
200V N-Channel Logic Level A-FET
N-CHANNEL MOSFET
Advanced Power MOSFET
HEXFET Power MOSFET
|
Fairchild Semiconductor
International Rectifier
|
| SFS9Z34 |
Advanced Power MOSFET 12 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF610A |
Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为1.5Ω，漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRFS840A |
N-Channel Power MOSFET00V.85Ω.6AN沟道功率MOS场效应管（漏源电00V，导通电.85Ω，漏电流4.6A 4.6 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET
Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
|
| SFS9634 |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
