| PART |
Description |
Maker |
| PBSS301PD |
4A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough
|
NXP
|
| PBSS4240DPN PBSS4240DPN115 |
40 V low VCEsat NPN/PNP transistor
|
NXP Semiconductors N.V.
|
| PBSS4240DPN |
40V low VCEsat NPN/PNP transistor
|
Philips Semiconductors
NXP
|
| PBSS4230PANP |
30 V, 2 A NPN/PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS303ND PBSS303ND115 |
60 V, 3 A NPN low VCEsat (BISS) transistor 603安NPN低饱和压BISS)晶体
60 V, 3 A NPN low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS2515M PBSS2515M315 |
15 V. 0.5 A NPN low VCEsat (BISS) transistor
15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd
|
NXP SEMICONDUCTORS
Philips
|
| PBSS5260PAP |
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS5230PAP |
30 V, 2 A PNP/PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| 2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| PBSS5240Y |
40 V low VCEsat PNP transistor
|
PHILIPS[Philips Semiconductors]
|
