PART |
Description |
Maker |
MMSF7N03Z MMSF7N03Z_D ON2275 MMSF7N03ZR2 |
7.5 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET SINGLE TMOS POWER MOSFET 7.5 AMPERES 30 VOLTS From old datasheet system
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Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
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MTD1312_D ON2465 |
SINGLE TMOS POWER MOSFET 30 VOLTS From old datasheet system
|
ON Semi
|
MTD3302 |
SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 10 mohm
|
Motorola, Inc
|
MMSF5P02HD MMSF5P02HD_D ON2272 ON2271 |
SINGLE TMOS POWER MOSFET 8.7 AMPERES 20 VOLTS From old datasheet system
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MOTOROLA[Motorola Inc] ON Semi MOTOROLA[Motorola, Inc]
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NGSF3443VT3 NGSF3443VT1 ON2764 |
SINGLE TMOS POWER MOSFET 4.4 AMPERES 20 VOLTS From old datasheet system
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ON Semi
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IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS POWER FET 27 AMPERES TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
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MMBF2202PT1_D ON2097 MMBF2201PT1 MMBF2202PT3 MMBF2 |
Small-signal MOSFET TMOS single P-channel field effect transistor Motorola Preferred Device From old datasheet system LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
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ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
|
MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培RDS(on)\u003d 0.080欧姆 From old datasheet system TMOS V Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
|
MMDF4P03HD |
DUAL TMOS POWER MOSFET 30 VOLTS
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MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
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MTB15N06E |
TMOS POWER FET 15 AMPERES 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|