| PART |
Description |
Maker |
| 10N65K 10N65KG-TF3-T 10N65KG-TF1-T 10N65KL-T2Q-T 1 |
10A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 10N65 10N65G-TA3-T 10N65G-TF1-T 10N65L-TQ2-T 10N65 |
10A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MJ15011 MJ15011-D MJ15012 |
Power 10A 250V Discrete NPN
Complementary Silicon Power Transistors
Power 10A 250V Discrete PNP
|
ON Semiconductor
|
| 2SC3306 2SC33306 |
10Ampere NPN silicon power transistor
POWER TRANSISTORS(10A,400V,100W)
|
Mospec Semiconductor
|
| MJD2955-001 MJD3055T4 |
Power 10A 60V Discrete PNP
Power 10A 60V Discrete NPN
|
ON Semiconductor
|
| 2SC4585 |
Switching Power Transistor(10A NPN)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| 2SC4058 |
Switching Power Transistor(10A NPN)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| HY10N65FT HY10N65T |
650V / 10A N-Channel Enhancement Mode MOSFET
|
HY ELECTRONIC CORP.
|
| 2N6359 DTL8755 DTL8045 DTL3202 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | TO-210AE 晶体管|晶体管|叩| 100V的五（巴西）总裁| 10A条一（c）|10AE
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 10A I(C) | TO-210AE
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-210AC
|
|
| GSF2.2013.01 GSF2.1013.01 |
Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 10A; Terminal Type: Quick Connect Solder Tabs; Panel mount; fuseholder inside; optional insulation cover 10A, 125/250VAC, MALE, MAINS POWER CONNECTOR, SOLDER
|
SCHURTER AG
|
