PART |
Description |
Maker |
27L1000-25 |
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 100万位[128Kx8]低电压工作的CMOS存储
|
Macronix International Co., Ltd.
|
K6T1008C2E-TF70T00 |
128Kx8 bit Low Power CMOS Static RAM
|
Samsung semiconductor
|
KM684000ALG-5 KM684000ALGI-7L KM684000ALP-7 K6T100 |
128Kx8 bit Low Power CMOS Static RAM Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:AC; No. of Contacts:3; Connector Shell Size:14S; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight; Circular Contact Gender:Pin 128Kx8 bit Low Power CMOS Static RAM 128Kx8位低功耗CMOS静态RAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K6X1008C2D-TQ55 K6X1008C2D-BF55 K6X1008C2D-GF55 K6 |
128Kx8 bit Low Power CMOS Static RAM 128Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
930104704 930104701 930104702 930104703 5962-89598 |
Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM
|
ATMEL Corporation
|
WME128K8 |
128Kx8 CMOS Monolithic EEPROM(128Kx8 CMOS单片EEPROM)
|
White Electronic Designs Corporation
|
28C17A-25/K 28C17A-25I/K 28C17AF-25/K 28C17A-20/K |
5V, Low-Power, Parallel-Input, Voltage-Output, 12-Bit DAC 12-Bit DACs with 32-Channel Sample-and-Hold Outputs Evaluation Kit/Evaluation System for the MAX5417_, MAX5418_, MAX5419_ 128Kx8 EEPROM 5V, Low-Power, Voltage-Output, Serial 12-Bit DACs 10-Bit Voltage-Output DACs in 8-Pin µMAX Single-Supply 3V/5V, Voltage-Output, Dual, Precision 12-Bit DACs x8的EEPROM
|
STMicroelectronics N.V.
|
MX29F100T MX29F100TMC-12 MX29F100TMC-55 MX29F100TM |
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
MX29F100T_B 29F100TB |
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY From old datasheet system
|
Macronix 旺宏
|
5962-8683001XX 5962-8683007YA 5962-8683007YX 5962- |
3-Pin Silicon Oscillator Silicon Oscillator with Low-Power Frequency Select and Enable 128Kx8 EEPROM 128Kx8 EEPROM
|
MtronPTI
|
BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) Asynchronous 4M(512Kx8) bits Static RAM
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BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor] Brilliance Semiconducto...
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W24LO1ST |
LOW POWER & NORMAL SRAM 128Kx8
|
Winbond Electronics
|