| PART |
Description |
Maker |
| M54583 M54583P M54583PNBSP |
From old datasheet system
M54583P Darlington Transistor Array
8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric Corporation
Mitsubishi Electronics America Inc
Mitsubishi Electric Semiconductor
|
| LB1212 LB1213 LB1216 LB1214 LB1211 LB1217 LB1215 L |
General Purpose Transistor Array
From old datasheet system
Generral-Purpose Transistor Array
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| BC807U |
General Purpose Transistors - PNP Silicon AF Transistor Array for AF input stages and drivers
PNP Silicon Transistor Array
|
INFINEON[Infineon Technologies AG]
|
| IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五（巴西）直| 10A条（丁）|254
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五（巴西）直| 5A条（丁）|54
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 7A条（丁）|
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五（巴西）直|3A条（丁）|10AC
TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五（巴西）直| 5A条（丁）|220
|
MITSUMI ELECTRIC CO., LTD.
Infineon Technologies AG
HIROSE ELECTRIC Co., Ltd.
|
| CA3096_04 CA3096 CA3096A CA3096AE CA3096AM CA3096A |
NPN/PNP Transistor Array, High Voltage, Enhanced Icbo, Iceo and Vce(sat)
NPN/PNP Transistor Array, High Voltage, General Purpose, Relaxed Parameters
NPN/PNP Transistor Arrays
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-012AC
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-001BB
|
INTERSIL[Intersil Corporation]
|
| HIP2060 HIP2060AS1 HIP2060AS2 HIP2060AS3 |
60V/ 10A Half Bridge Power MOSFET Array
60V, 10A Half Bridge Power MOSFET Array
20000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN 10 A, 60 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Intersil Corporation
Intersil, Corp.
|
| PE84140_06 84140-00 84140-01 84140-02 PE84140 PE84 |
Ultra-High Linearity Broadband Quad MOSFET Array 0 MHz - RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array
|
Peregrine Semiconductor, Corp.
PEREGRINE[Peregrine Semiconductor Corp.]
|
| UPA1456 UPA1456H |
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
NEC[NEC]
|
| UPA1437 UPA1437H |
PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
NEC[NEC]
|
| HS0-6254RH-Q HS1-6254RH HS-6254RH 5962F9764101VXC |
Radiation Hardened Ultra High Frequency
NPN Transistor Array(抗辐射甚高频NPN晶体管阵
1500PF 50V 0805
BJT
Radiation Hardened Ultra High Frequency NPN Transistor Array 辐射加固超高频NPN晶体管阵
|
Intersil Corporation
Intersil, Corp.
|
| BCV62C BCV62A BCV62B BCV62 |
?PNPSiliconDoubleTransistortobeusedasacurrentmirror?
TRANSISTOR|BJT|ARRAY|BLDGBLOCK|30VV(BR)CEO|100MAI(C)|SOT-143
PNP Silicon Double Transistor
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
