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ILA03N60 - 3A / 600V IGBT with monolithically integrated diode for resonant-halfbridge topologies in lighting ballast (40W-120W) From old datasheet system High Speed CMOS Logic Hex Non-Inverting Buffers 16-SO -55 to 125 LightMOS功率晶体 LightMOS Power Transistor LightMOS功率晶体

ILA03N60_331641.PDF Datasheet

 
Part No. ILA03N60 Q67040-S4625 ILB03N60 Q67040-S4626 Q67040-S4627 Q67040-S4628 ILP03N60 ILD03N60
Description 3A / 600V IGBT with monolithically integrated diode for resonant-halfbridge topologies in lighting ballast (40W-120W)
From old datasheet system
High Speed CMOS Logic Hex Non-Inverting Buffers 16-SO -55 to 125 LightMOS功率晶体
LightMOS Power Transistor LightMOS功率晶体

File Size 327.69K  /  15 Page  

Maker


Infineon Technologies A...
INFINEON[Infineon Technologies AG]



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Part: ILA03N60
Maker: INFINEON
Pack: P-TO22..
Stock: Reserved
Unit price for :
    50: $0.52
  100: $0.49
1000: $0.47

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 Full text search : 3A / 600V IGBT with monolithically integrated diode for resonant-halfbridge topologies in lighting ballast (40W-120W) From old datasheet system High Speed CMOS Logic Hex Non-Inverting Buffers 16-SO -55 to 125 LightMOS功率晶体 LightMOS Power Transistor LightMOS功率晶体
 Product Description search : 3A / 600V IGBT with monolithically integrated diode for resonant-halfbridge topologies in lighting ballast (40W-120W) From old datasheet system High Speed CMOS Logic Hex Non-Inverting Buffers 16-SO -55 to 125 LightMOS功率晶体 LightMOS Power Transistor LightMOS功率晶体


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