| PART |
Description |
Maker |
| 2SC4213 E000917 |
FOR MUTING AND SWITCHING APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)
|
Toshiba Corporation
|
| 2SC5232 E007767 |
NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)
From old datasheet system
GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2878-A 2SC2878-B |
For Muting and Switching Applications
|
Toshiba Semiconductor
|
| 3SK248 |
Muting/Switching Applications
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| 2SC3327 E000831 |
From old datasheet system
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC3326 E000830 |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC2878 |
Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications
|
TOSHIBA
|
| HN1C03F07 HN1C03F |
Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications
|
Toshiba Semiconductor
|
| 2SC5376F |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
| HN1C03FU E001973 |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3327 2SC3327B |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SPAK
TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS
|
TOSHIBA
|
