| PART |
Description |
Maker |
| 2SC5233 E007768 |
NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)
GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION
From old datasheet system
|
Toshiba Semiconductor
|
| 2SA1953 |
TRANSISTOR (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS) 晶体管（通用放大器，开关和静音开关应用）
TRANSISTOR (GENERAL PURPOSE AMPLIFIER/ SWITCHING AND MUTING SWITCH APPLICATIONS)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC5376 EE08405 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER/ FOR MUTING AND SWITCHING APPLICATIONS)
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER FOR MUTING AND SWITCHING APPLICATIONS)
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, FOR MUTING AND SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1954 2SA195407 |
General Purpose Amplifier Applications Switching and Muting Switch Application
|
Toshiba Semiconductor
|
| 2SC332607 2SC3326 |
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
Toshiba Semiconductor
|
| HN1C03FU |
Transistor Silicon Npn Epitaxial Type (PCT Process) For Muting and Switching Applications
|
TOSHIBA
|
| 2SA1953 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| 2SC5376F |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
| 2SC3327 2SC3327B |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SPAK
TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS
|
TOSHIBA
|
| 2SD2704K12 |
For Muting
|
Rohm
|
