| PART |
Description |
Maker |
| FCH25N60N |
N-Channel SupreMOSMOSFET 600V, 25A, 126m
|
Fairchild Semiconductor
|
| ENA0869 |
N-Channel Power MOSFET, 1500V, 2A, 13Ohm, TO-263-2L
|
ON Semiconductor
|
| ECG5699 ECG5683 ECG5687 ECG56019 ECG56015 |
TRIAC|800V V(DRM)|25A I(T)RMS|TO-220AB
TRIAC|200V V(DRM)|25A I(T)RMS|TO-208AA
TRIAC|600V V(DRM)|25A I(T)RMS|TO-208AA 可控硅| 600V的五（DRM）的| 25A条口（T）的有效值|08AA
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 25A条口T）的有效值|20
|
ITT, Corp.
Advanced Interconnections, Corp.
|
| BCR25FM-12LBBB0 BCR25FM-12LBA8BB0 |
600V - 25A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
| APT6025BVR |
POWER MOS V 600V 25A 0.250 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| SSU2N60B SSR2N60B SSR2N60 SSU2N60BTU SSR2N60BTF SS |
600V N-Channel MOSFET
600V N-Channel MOSFET 1.8 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
600V N-Channel B-FET / Substitute of SSU2N60A
600V N-Channel B-FET / Substitute of SSR2N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| HFA25PB60 |
600V 25A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
|
International Rectifier
|
| IRG4PC40KD IRG4PC40KDPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 2.1V的电压，@和VGE \u003d 15V的，集成电路\u003d 25A条）
600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W
600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| FQI6N60C FQB6N60C FQB6N60CTM |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQP2N60C FQPF2N60C |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
