| PART |
Description |
Maker |
| MGA-633P8-BLKG MGA-633P8-TR1G |
Ultra Low Noise, High Linearity Active Bias Low Noise Amplifi er
|
AVAGO TECHNOLOGIES LIMITED
|
| LT1994CDDTR LT1994IMS8 |
Low Noise, Low Distortion Fully Differential Input/Output Amplifier/Driver; Package: DFN; No of Pins: 8; Temperature Range: 0°C to 70°C OP-AMP, 3000 uV OFFSET-MAX, 70 MHz BAND WIDTH, PDSO8
Low Noise, Low Distortion Fully Differential Input/Output Amplifi er/Driver
|
Linear Technology, Corp.
|
| NE3514S02-T1C NE3514S02 NE3514S02-T1C-A NE3514S02- |
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs
|
| NE3514S02-T1C NE3514S02-T1D |
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
Renesas Electronics Corporation
|
| NE3210S01 NE3210S01-T1 NE3210S01-T1B |
Low Noise Amplifier N-Channel HJ-FET(低噪声N沟道结型场效应管) 低噪声放大器N沟道黄建忠场效应管（低噪沟道结型场效应管
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE334S01 NE334S01-T1 NE334S01-T1B |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET C波段超低噪声放大器N沟道黄建忠场效应
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE32400 NE24200 |
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
NEC[NEC]
|
| MGA-675T6-TR1G MGA-675T6-TR2G MGA-675T6-BLKG |
Low Noise Amplifi er with Shutdown Mode in Low Profi le Package for 4.9 - 6 GHz Application
|
AVAGO TECHNOLOGIES LIMITED
|
| LTC6605-14 LTC6605CDJC-14-PBF LTC6605CDJC-14-TRPBF |
Dual Matched 14MHz Filter with Low Noise, Low Distortion Differential Amplifi er
|
Linear Technology
|
| NE350184C NE350184C-T1 NE350184C-T1A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Laboratories
|
| 2SK93212 2SK932-22-TB-E 2SK932-23-TB-E 2SK932-24-T |
High-Frequency Low-Noise Amplifi er Applications
|
Sanyo Semicon Device
|
