| PART |
Description |
Maker |
| BLW32 |
UHF linear power transistor(UHF线性功率晶体管) UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BLF2022-40 |
UHF power LDMOS transistor UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| HVV0405-175-EK |
UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications
|
HVVi Semiconductors, Inc.
|
| 2SC3841 2SC3841P 2SC3841Q 2SC3841T62 2SC3841T64 2S |
For UHF tuner, MIXER and OSC.
UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-346
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 12V的五（巴西）总裁| 30mA的一（c）|的SOT - 346
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| 2SC4186 2SC4186T63 2SC4186T62 2SC4186T64 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-323
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC Corp.
NEC[NEC]
|
| UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| ASI10650 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
|
ADVANCED SEMICONDUCTOR INC
Advanced Semiconductor, Inc.
|
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| BLT82 |
UHF power transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BLV2042 |
UHF power transistor
|
NXP Semiconductors
Philips Semiconductors
|
| BLV21 |
UHF power transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
