| PART |
Description |
Maker |
| 2SK2110 |
N-Channel MOSFET
Low on-resistance RDS(on)=1.5 MAX High switching speed Drain to source voltage VDSS 100
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| IRFB4710PBF IRFS4710PBF IRFSL4710PBF IRFS4710TRR I |
High frequency DC-DC converters
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
75 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
|
International Rectifier
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| FS70KM-2 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
70 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FN
|
Powerex Power Semicondu...
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| FS70UMJ-2 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 70 A, 100 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| IXTA05N100 |
N-Channel Enhancement Mode High Voltage MOSFET(??ぇ婕???荤┛?靛?000V,瀵奸??甸?5惟??娌??澧?己????靛?MOSFET)
|
IXYS CORP
|
| 2SD1006 |
High collector to emitter voltage: VCEO 100V. Collector-base voltage VCBO 100 V
|
TY Semiconductor Co., Ltd
|
| 2SK2347 |
N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications
|
SANYO
|
| IRS23364DJTRPBF |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications
|
International Rectifier
|
| SFF80N10Z |
55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET 55 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Solid State Devices, Inc.
|
