| PART |
Description |
Maker |
| P122 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| UTCHE8550 HE8550-TO-92 |
PNP EPITAXIAL SILIC ON TRANSISTOR
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| F1240 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F1260 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F1520 F1065 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F2212 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F2048 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F2046 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F1430 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F1040 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
