PART |
Description |
Maker |
K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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IDT70V7519S IDT70V7519S166DR IDT70V7519S200BF |
HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56K × 36 SYNCHRONOU开户银行可切换双端口静态RAM.5V的接
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Integrated Device Technology, Inc.
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SIOV-S10K20 SIOV-S05K250 SIOV-S20K1000 SIOV-S20K11 |
RESISTOR, VOLTAGE DEPENDENT, 26 V, 3.1 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 320 V, 8.2 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 1465 V, 410 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 14 V, 10 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 150 V, 60 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 170 V, 74 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 180 V, 78 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 200 V, 85 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 22 V, 14 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 26 V, 18 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 300 V, 130 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 31 V, 22 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 320 V, 140 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 350 V, 151 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 38 V, 26 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 150 V, 3.6 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 200 V, 4.9 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 180 V, 4.5 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 22 V, 0.5 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 225 V, 5.6 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 100 V, 2.5 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 45 V, 2.5 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 100 V, 5.9 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 45 V, 5.4 J, THROUGH HOLE MOUNT RADIAL LEADED Leaded varistors, StandarD series SIOV metal oxide varistors SIOV metal oxide varistors
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爱普科斯(中国)投资有限公司 EPCOS
|
70V7519S133BF 70V7519S133BC 70V7519S133BCI 70V7519 |
HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
Integrated Device Technology
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HYS72D32500GR-8-A HYS72D64500GR-8-A HYS72D64500GR- |
256MB (32Mx72) PC1600 1-bank 512MB (64Mx72) PC1600 1-bank 512MB (64Mx72) PC2100 1-bank 1GB (128Mx72) PC1600 2-bank 1GB (128Mx72) PC2100 2-bank GB的(128Mx72)PC2100 2银行 32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
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Infineon Technologies AG
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HYS72D32000GU-7-A HYS64D32000GU-7-A HYS72D64020GU- |
256MB (32Mx64) PC2100 1-bank 512MB (64Mx72) PC2100 2-bank 512MB (64Mx64) PC2100 2-bank 512MB (64Mx72) PC1600 2-bank 256MB (32Mx72) PC1600 1-bank End-of-Life 512MB (64Mx64) PC1600 2-bank 12MB的(64Mx64)PC1600 2银行 256MB (32Mx72) PC2100 1-bank 56MB的(32Mx72)PC2100 1银行
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Infineon Technologies AG
|
R61ZOV231RA35 R6221ZOV181RA07 R6521ZOV170RA15 R692 |
RESISTOR, VOLTAGE DEPENDENT, 300 V, 35 J, THROUGH HOLE MOUNT RESISTOR, VOLTAGE DEPENDENT, 230 V, 35 J, THROUGH HOLE MOUNT RESISTOR, VOLTAGE DEPENDENT, 22 V, 15 J, THROUGH HOLE MOUNT RESISTOR, VOLTAGE DEPENDENT, 160 V, 35 J, THROUGH HOLE MOUNT RESISTOR, VOLTAGE DEPENDENT, 360 V, 23 J, THROUGH HOLE MOUNT RESISTOR, VOLTAGE DEPENDENT, 200 V, 23 J, THROUGH HOLE MOUNT
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Maida Development Company Moeller Electric, Corp.
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M36DR432A M36DR432A100ZA6C M36DR432A100ZA6T M36DR4 |
32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256K x16 SRAM / Multiple Memory Product 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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M2V64S20BTP M2V64S20BTP-10 M2V64S20BTP-10L M2V64S2 |
64M bit Synchronous DRAM 4-BANK x 2097152-WORD x 8-BIT 4-BANK x 1048576-WORD x 16-BIT 4-BANK x 4194304-WORD x 4-BIT From old datasheet system
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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UPD6P4BMC-5A4 |
MS3112E22-32S
|
NEC Corp.
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MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分(12k × 8/256K × 16Falsh存储器(12k × 8/256K × 16位单5V的电源电压闪速存储器
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Fujitsu Limited Fujitsu, Ltd.
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HYS72V32220GU-8-C2 HYS64V16300GU HYS64V16300GU-7.5 |
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank End-of-Life SDRAM Modules - 256MB PC133 (2-2-2) 2-bank (ECC) End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank (ECC) End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank End-of-Life SDRAM Modules - 256MB PC133 (3-3-3) 2-bank (ECC) End-of-Life SDRAM Modules - 128MB PC133 (3-3-3) 1-bank (ECC) End-of-Life SDRAM Modules - 256MB PC133 (3-3-3) 2-bank End-of-Life SDRAM Modules - 128MB PC133 (3-3-3) 1-bank End-of-Life 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
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INFINEON[Infineon Technologies AG]
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